A quasi-static technique for MOS C-V and surface state measurements
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
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3. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
4. Limitations of the MOS capacitance method for the determination of semiconductor surface properties
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