Carrier capture at the SiO2–Si interface: A physical model
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2778354
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4. A pulsed interface-probing technique for MOS interface characterization at mid-gap levels
5. Capture cross section of Si‐SiO2interface states generated during electron injection
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