A pulsed interface-probing technique for MOS interface characterization at mid-gap levels-Reference-Cited by-同舟云学术

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A pulsed interface-probing technique for MOS interface characterization at mid-gap levels

Published:1988 Issue:12 Volume:35 Page:2391-2396
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cilingiroglu U.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/449/00008820.pdf?arnumber=8820

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier capture at the SiO2–Si interface: A physical model;Applied Physics Letters;2007-09-10

2. Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements;Microelectronics Reliability;2004-01

3. Application of charge pumping technique for sub-micron MOSFET characterization;Microelectronic Engineering;1998-11

4. Charge Pumping;The Kluwer International Series in Engineering and Computer Science;1995

5. Transient two-dimensional numerical analysis of the charge-pumping experiment;Microelectronic Engineering;1992-09

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