Enhanced Short-circuit Capability for 1.2 kV SiC SBD-integrated Trench MOSFETs Using Cu Blocks Sintered on the Source Pad
Author:
Affiliation:
1. University of Tsukuba,Graduate School of Pure and Applied Sciences,Ibaraki,JAPAN,305-8573
2. National Institute of Advanced Industrial Science and Technology (AIST),Ibaraki,JAPAN,305-8569
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813664.pdf?arnumber=9813664
Reference9 articles.
1. First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS
2. Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS
3. Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS
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