First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS
Author:
Funder
University of Tsukuba
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/8656606/08717671.pdf?arnumber=8717671
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1. SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness;IEEE Transactions on Electron Devices;2023-11
2. A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness;Micromachines;2023-10-21
3. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18
4. Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs;Japanese Journal of Applied Physics;2023-02-20
5. Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs;Japanese Journal of Applied Physics;2022-12-23
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