A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness

Abstract

A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. The simulation results show that the proposed MOSFET has good static performance and a longer short-circuit withstand time (tsc). The super-junction structure enables the device to possess an excellent compromise of breakdown voltage (BV) and specific on-resistance (Ron,sp). Under short-circuit conditions, the depletion of p-pillar, p-shield, and floating p regions can effectively reduce saturation current and improve short-circuit capability. The proposed device has minimum gate-drain charge (Qgd) and gate-drain capacitance (Cgd) compared with other devices. Moreover, the formation of floating p regions will not lead to an increase in process complexity. Therefore, the proposed MOSFET can maintain good dynamic and static performance and short-circuit ability together without increasing the difficulty of the process.