Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS
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Published:2020-07
Issue:
Volume:1004
Page:795-800
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Okada Masakazu1, Kumazawa Teruaki2, Kobayashi Yusuke1, Baba Masakazu1, Harada Shinsuke1
Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST) 2. Toyota Motor Co.
Abstract
A 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench metal oxide semiconductor field effect transistor (MOSFET) (SWITCH-MOS) exhibits potential for solving body-PiN-diode-related problems such as bipolar forward degradation and switching losses among relatively low breakdown voltage 1.2 kV-class SiC MOSFETs. In this study, dynamic characteristics and switching losses of the SWITCH-MOS and conventional MOSFET are compared. The results demonstrate that the SWITCH-MOS exhibits smaller turn-on and reverse recovery losses than a conventional MOSFET at high temperatures. Ruggedness performances such as short circuit and unclamped inductive switching capabilities were evaluated.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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