Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture-Reference-Cited by-同舟云学术

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

Published:2022-05-22 Issue: Volume: Page:
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Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Le Royer C.¹,Mohamad B.¹,Biscarrat J.¹,Vauche L.¹,Escoffier R.¹,Buckley J.¹,Becu S.¹,Riat R.¹,Gillot C.¹,Charles M.¹,Ruel S.¹,Pimenta-Barros P.¹,Posseme N.¹,Besson P.¹,Boudaa F.¹,Vannuffel C.¹,Vandendaele W.¹,Viey A.G.¹,Krakovinsky A.¹,Jaud M.-A.¹,Modica R.²,Iucolano F.²,Tiec R. Le³,Levi S.³,Orsatelli M.⁴,Gwoziecki R.¹,Sousa V.¹

Affiliation:

1. CEA, LETI, MINATEC Campus,Grenoble,France,F-38000

2. STMicroelectronics,Catania,Italy,95121

3. PDC Business Group,Applied Materials,Rehovot,Israel,76705

4. CEA Tech Occitanie,Labège,France,F-31670

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813672.pdf?arnumber=9813672

Reference11 articles.

1. Top-side cooled 650 V E-mode GaN transistor,0

2. 600V CoolGaN™ enhancement-mode Power Transistor,2020