Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH > 5V and On‐Current

Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH > 5V and On‐Current > 0.5 A mm −1

Published:2020-01-03 Issue:7 Volume:217 Page:1900709
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kumar Sandeep¹^ORCID,Vura Sandeep¹,Dolmanan Surani Bin²,Tripathy Sudhiranjan²,Muralidharan Rangarajan¹,Nath Digbijoy Neelim¹

Affiliation:

1. Centre for Nano Science and Engineering (CeNSE)Indian Institute of Science (IISc) CV Raman Rd. Bengaluru Karnataka 560012 India

2. Institute of Materials Research and Engineering (IMRE)Agency for Science, Technology, and Research (A*STAR) 2 Fusionopolis Way 138634 Singapore Singapore

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900709

Reference23 articles.

1. Power GaN Devices

2. Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

3. 7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering

4. 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

5. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

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