A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range-Reference-Cited by-同舟云学术

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A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range

Published:2020-06 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Symposium on VLSI Circuits
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Author:

Chou Chung-Cheng,Lin Zheng-Jun,Lai Chien-An,Su Chin-I,Tseng Pei-Ling,Chen Wei-Chi,Tsai Wu-Chin,Chu Wen-Ting,Ong Tong-Chern,Chuang Harry,Chih Yu-Der,Chang Tsung-Yung Jonathan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9146894/9162771/09163014.pdf?arnumber=9163014

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Smart Write Algorithm to Enhance Performances and Reliability of an RRAM Macro;IEEE Journal of Solid-State Circuits;2024-09

2. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states;Materials Science in Semiconductor Processing;2024-08

3. A Read Margin Enhancement Circuit With Dynamic Bias Optimization for MRAM;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-08

4. On the Asymmetry of Resistive Switching Transitions;Electronics;2024-07-05

5. EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage;IEEE Journal of Solid-State Circuits;2024-07

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