On the Asymmetry of Resistive Switching Transitions

Author:

Vinuesa Guillermo1,García Héctor1ORCID,Pérez Eduardo23ORCID,Wenger Christian23ORCID,Íñiguez-de-la-Torre Ignacio4ORCID,González Tomás4ORCID,Dueñas Salvador1ORCID,Castán Helena1ORCID

Affiliation:

1. Department of Electronics, Universidad de Valladolid, Paseo de Belén 15, 47011 Valladolid, Spain

2. IHP-Leibniz-Institut für Innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany

3. Faculty 1 MINT-Mathematics, Computer Science, Physics, Electrical Engineering, and Information Technology, BTU Cottbus-Senftenberg, 03046 Cottbus, Germany

4. Applied Physics Department and NANOLAB USAL, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

Abstract

In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal stacks is investigated, mainly focusing on the analysis of set and reset transitions. The electrical measurements in a wide temperature range reveal that the switching transitions require less voltage (and thus, less energy) as temperature rises, with the reset process being much more temperature sensitive. The main conduction mechanism in both resistance states is Space-charge-limited Conduction, but the high conductivity state also shows Schottky emission, explaining its temperature dependence. Moreover, the temporal evolution of these transitions reveals clear differences between them, as their current transient response is completely different. While the set is sudden, the reset process development is clearly non-linear, closely resembling a sigmoid function. This asymmetry between switching processes is of extreme importance in the manipulation and control of the multi-level characteristics and has clear implications in the possible applications of resistive switching devices in neuromorphic computing.

Publisher

MDPI AG

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