True Random Number Generator Based on the Variability of the High Resistance State of RRAMs-Reference-Cited by-同舟云学术

True Random Number Generator Based on the Variability of the High Resistance State of RRAMs

Published:2023 Issue: Volume:11 Page:66682-66693
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Akbari Maryam¹^ORCID,Mirzakuchaki Sattar¹,Arumí Daniel²^ORCID,Manich Salvador²^ORCID,Gómez-Pau Alvaro²^ORCID,Campabadal Francesca³^ORCID,González Mireia Bargalló³^ORCID,Rodríguez-Montañés Rosa²^ORCID

Affiliation:

1. Department of Electrical Engineering, Iran University of Science and Technology, Tehran, Iran

2. Department of Electronics Engineering, Universitat Politècnica de Catalunya, Barcelona, Spain

3. Centre Nacional de Microelectrònica, Institut de Microelectrònica de Barcelona (CSIC), Bellaterra, Barcelona, Spain

Funder

Spanish Ministry of Science, Innovation, and Universities

Fondo Europeo de Desarrollo Regional (FFEDER) funds

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10168114.pdf?arnumber=10168114

Reference48 articles.

1. A high-speed oscillator-based truly random number source for cryptographic applications on a smartcard IC

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3. A low-power true random number generator using random telegraph noise of single oxide-traps

4. 10×10 nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation;govoreanu;IEDM Tech Dig,2011

5. ASIC implementation of random number generators using SR latches and its evaluation

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