A DC to X-band frequency doubler using GaAs HBT MMIC
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx3/4660/13055/00596545.pdf?arnumber=596545
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Switched Capacitor Bank Design With Geometric Progression for Wideband Frequency Doubler;IEEE Solid-State Circuits Letters;2021
2. Fully Integrated Single-Chip 305–375-GHz Transceiver With On-Chip Antennas in SiGe BiCMOS;IEEE Transactions on Terahertz Science and Technology;2018-05
3. A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output;IEEE Journal of Solid-State Circuits;2016-09
4. A novel transformer-based mm-Wave frequency doubler with enhanced output symmetry;Analog Integrated Circuits and Signal Processing;2014-03-27
5. A Study of SiGe HBT Signal Sources in the 220–330-GHz Range;IEEE Journal of Solid-State Circuits;2013-09
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