A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output

Published:2016-09 Issue:9 Volume:51 Page:2054-2065
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Shopov Stefan,Balteanu Andreea,Hasch Juergen,Chevalier Pascal,Cathelin Andreia,Voinigescu Sorin P.

Funder

Robert Bosch GmbH

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/7562573/07496907.pdf?arnumber=7496907

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 230 GHz Signal Generator for High-Bandwidth Data Links in 130 nm SiGe BiCMOS;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

2. A 223–276-GHz Cascadable FMCW Transceiver in 130-nm SiGe BiCMOS for Scalable MIMO Radar Arrays;IEEE Transactions on Microwave Theory and Techniques;2023-12

3. A 276–312-GHz (×12) Frequency Multiplier Chain With Milliwatt Level Output Power in 65-nm CMOS Technology;IEEE Microwave and Wireless Technology Letters;2023-11

4. 280-GHz Frequency Multiplier Chains in 250-nm InP HBT Technology;IEEE Journal of Solid-State Circuits;2023-09

5. A 205–273-GHz Frequency Multiplier Chain (×6) With 9-dBm Output Power and 1.92% DC-to-RF Efficiency in 0.13-µm SiGe BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2023-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP