A 205–273-GHz Frequency Multiplier Chain (×6) With 9-dBm Output Power and 1.92% DC-to-RF Efficiency in 0.13-µm SiGe BiCMOS-Reference-Cited by-同舟云学术

A 205–273-GHz Frequency Multiplier Chain (×6) With 9-dBm Output Power and 1.92% DC-to-RF Efficiency in 0.13-µm SiGe BiCMOS

Published:2023-07 Issue:7 Volume:71 Page:2909-2919
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Li Zekun¹^ORCID,Chen Jixin¹^ORCID,Tang Dawei¹,Zhou Rui¹,Hong Wei¹^ORCID

Affiliation:

1. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/10169131/10032257.pdf?arnumber=10032257

Reference37 articles.

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3. A 195 GHz single-transistor fundamental VCO with 15.3% DC-to-RF efficiency, 4.5 mW output power, phase noise FoM of −197 dBc/Hz and 1.1% tuning range in a 55 nm SiGe process

4. A 24–30-GHz TRX Front-End With High Linearity and Load-Variation Insensitivity for mm-Wave 5G in 0.13-μm SiGe BiCMOS

5. An ultra-wideband harmonic radiator with a tuning range of 62GHz (28.3%) at 220GHz;mostajeran;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),2017

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