A 195 GHz single-transistor fundamental VCO with 15.3% DC-to-RF efficiency, 4.5 mW output power, phase noise FoM of −197 dBc/Hz and 1.1% tuning range in a 55 nm SiGe process-Reference-Cited by-同舟云学术

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A 195 GHz single-transistor fundamental VCO with 15.3% DC-to-RF efficiency, 4.5 mW output power, phase noise FoM of −197 dBc/Hz and 1.1% tuning range in a 55 nm SiGe process

Published:2017-06 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Khatibi Hamid,Khiyabani Somayeh,Cathelin Andreia,Afshari Ehsan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7961542/7968986/07969040.pdf?arnumber=7969040

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 230 GHz Signal Generator for High-Bandwidth Data Links in 130 nm SiGe BiCMOS;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

2. High-Power 150/245-GHz Fundamental Oscillators With 12.1/$-$2.54-dBm Peak Output Power for Phased Array Transceivers;IEEE Journal of Solid-State Circuits;2024

3. A High-Efficiency High-Power 170-176-GHz Frequency Stabilized Quadrature Radiator;IEEE Journal of Solid-State Circuits;2024-01

4. A 205–273-GHz Frequency Multiplier Chain (×6) With 9-dBm Output Power and 1.92% DC-to-RF Efficiency in 0.13-µm SiGe BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2023-07

5. Graphical Approach to Optimization of Maximally Efficient-Gain-Boosted Feedback Amplifiers;Electronics;2023-06-30

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