A Study of SiGe HBT Signal Sources in the 220–330-GHz Range-Reference-Cited by-同舟云学术

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A Study of SiGe HBT Signal Sources in the 220–330-GHz Range

Published:2013-09 Issue:9 Volume:48 Page:2011-2021
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Voinigescu Sorin P.,Tomkins Alexander,Dacquay Eric,Chevalier Pascal,Hasch Juergen,Chantre Alain,Sautreuil Bernard

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/6583962/06542030.pdf?arnumber=6542030

Cited by 69 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-08

2. 200 GHz single chip microsystems for dynamic nuclear polarization enhanced NMR spectroscopy;Nature Communications;2024-06-28

3. A 278-348 GHz 6^th Harmonic Injection Locking Frequency Multiplier based on 3^rd Harmonic Injection Locking Oscillator in 130 nm SiGe Process;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. A 290–359 GHz Push-Push Signal Source with 1.7 dBm P_max using Variable Inductance in SiGe BiCMOS Technology;2024 IEEE Wireless and Microwave Technology Conference (WAMICON);2024-04-15

5. 230 GHz Signal Generator for High-Bandwidth Data Links in 130 nm SiGe BiCMOS;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

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