Optimization of Nanoscale Thyristors on SOI for High-Performance High-Density Memories-Reference-Cited by-同舟云学术

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Optimization of Nanoscale Thyristors on SOI for High-Performance High-Density Memories

Published:2006-10 Issue: Volume: Page:
ISSN:1078-621X
Container-title:2006 IEEE international SOI Conferencee Proceedings
language:
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Author:

Yang K.j.,Gupta R.N.,Banna S.,Nemati F.,Cho H.-j.,Ershov M.,Tarabbia M.,Hayes D.,Robins S.T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4062841/4062842/04062908.pdf?arnumber=4062908

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Excellent scalability including self-heating phenomena of vertical-channel field-effect-diode type capacitor-less one transistor dynamic random access memory cell;Japanese Journal of Applied Physics;2014-01-01

3. A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications;Solid-State Electronics;2013-12

4. Sharp-Switching CMOS-Compatible Devices with High Current Drive;Future Trends in Microelectronics;2013-06-14

5. Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage;Solid-State Electronics;2013-06

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