Author:
Wan Jing,Le Royer Cyrille,Zaslavsky Alexander,Cristoloveanu Sorin
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. A 31ns random cycle VCAT-based 4F2 DRAM with enhanced cell efficiency;Song;Proc Symp VLSI Circuits,2009
2. Challenges for the DRAM cell scaling to 40nm;Mueller;Tech Dig Int Electron Dev Meet (IEDM),2005
3. A capacitor less 1T-DRAM on SOI based on dynamic coupling and double-gate operation;Bawedin;Electron Device Lett IEEE,2008
4. A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory;Yoshida;Electron Devices IEEE Trans,2006
5. Ultra-thin fully-depleted SOI MOSFETs: special charge properties and coupling effects;Eminente;Solid-State Electron,2007
Cited by
49 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献