A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/33831/01610897.pdf?arnumber=1610897
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