1T DRAM with Raised SiGe Quantum Well for Sensing Margin Improvement
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Published:2023-02-28
Issue:1
Volume:23
Page:64-70
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ISSN:1598-1657
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Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
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language:en
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Short-container-title:JSTS
Author:
Lee Si-Won,Cho Seongjae,Cho Il-Hwan,Kim Garam
Publisher
The Institute of Electronics Engineers of Korea
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials