Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects-Reference-Cited by-同舟云学术

Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

Published:2007-02 Issue:2 Volume:51 Page:239-244
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Eminente S.,Cristoloveanu S.,Clerc R.,Ohata A.,Ghibaudo G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Pretet J, Ohata A, Dieudonne F, Allibert F, Bresson N, Matsumoto T, et al. Scaling issues for advanced SOI devices: gate oxide tunneling, thin buried oxide, and ultra-thin films. In: 7th International symposium silicon nitride and silicon dioxide thin insulating films, Paris, France, 2003. Electrochemical Society Proceedings, vol. 2003-02, Pennington (USA); 2003. p. 476–87.

2. Frontiers of silicon-on-insulator;Celler;J Appl Phys,2003

3. Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFETs;Lim;IEEE Trans Electron Dev,1983

4. Electrical characterization of silicon-on-insulator materials and devices;Cristoloveanu,1995

5. Schred Simulation Tool, www.nanohub.org.

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