Excellent scalability including self-heating phenomena of vertical-channel field-effect-diode type capacitor-less one transistor dynamic random access memory cell
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference30 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Capacitance–resistance modeling of an inverter based on a nanoscale side-contacted field-effect diode with an overshoot suppression approach;Journal of Computational Electronics;2021-07-17
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3. Performance comparison of 6T SRAM bit-cells based on side-contacted FED and CMOS;Alexandria Engineering Journal;2020-10
4. Double-Gate Field-Effect Diode: A Novel Device for Improving Digital-and-Analog Performance;IEEE Transactions on Electron Devices;2020-01
5. Design and Simulation of Low-Power Logic Gates Based on Nanoscale Side-Contacted FED;IEEE Transactions on Electron Devices;2017-01
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