A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications-Reference-Cited by-同舟云学术

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A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications

Published:2013-12 Issue: Volume:90 Page:2-11
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wan Jing,Royer Cyrille Le,Zaslavsky Alexander,Cristoloveanu Sorin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. MOS-controlled thyristors—a new class of power devices;Temple;IEEE Trans Electron Device,1986

2. Perspective performances of MOS-Gated GTO in high-power applications;Ronsisvalle;IEEE Trans Electron Device,2010

3. Cho H-J, Nemati F, Roy R, Gupta R, Yang K, Ershov M, et al. A novel capacitor-less DRAM cell using thin capacitively-coupled thyristor (TCCT). In: IEDM tech. dig.; 2005. p. 311–4.

4. Gupta R, Nemati F, Robins S, Yang K, Gopalakrishnan V, Sundarraj JJ, et al. 32nm High-density high-speed T-RAM embedded memory technology. In IEDM tech. dig.; 2010. p. 12.1.1–4.

5. Yang KJ, Gupta RN, Banna S, Nemati F, Cho H-J, Ershov M, et al. Optimization of nanoscale thyristors on SOI for high-performance high-density memories. In: Proc. Int. SOI Conf.; 2006. p. 113–4.

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