Analysis of High Temperature Characteristics of Double Gate Feedback Field Effect Transistor
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Published:2024-02-29
Issue:1
Volume:24
Page:33-40
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ISSN:2233-4866
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Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
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language:en
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Short-container-title:JSTS
Author:
Park Myeongho,Kim Kichan,Oh Seungyeon,Cho Il-Hwan
Publisher
The Institute of Electronics Engineers of Korea