A New Compact Z<sup>2</sup>-FET Model Based on Artificial Neural Network and Its Applications-Reference-Cited by-同舟云学术

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A New Compact Z²-FET Model Based on Artificial Neural Network and Its Applications

Published:2024-06 Issue:6 Volume:71 Page:3532-3539
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Chenyu¹^ORCID,Chen Yingxin¹^ORCID,Cristoloveanu Sorin²^ORCID,Zhou Peng³^ORCID,Yong Xu²^ORCID,Liu Fanyu⁴^ORCID,Wan Jing¹^ORCID

Affiliation:

1. School of Information Science and Technology, Fudan University, Shanghai, China

2. Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou, China

3. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China

4. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

Shanghai Science and Technology Commission “Explorer Project”

Natural Science Foundation of Shanghai

Guangdong Province Research and Development in Key Fields from Guangdong Greater Bay Area Institute of Integrated Circuit and System

Guangzhou City Research and Development Program in Key Field

Opening Fund of Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10538150/10508307.pdf?arnumber=10508307

Reference32 articles.

1. Z²-FET: A zero-slope switching device with gate-controlled hysteresis

2. A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications

3. Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies

4. Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

5. A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms

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