Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies-Reference-Cited by-同舟云学术

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Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
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Author:

Salman Akram A.,Beebe Stephen G.,Emam Mostafa,Pelella Mario M.,Ioannou Dimitris E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154406.pdf?arnumber=4154406

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New Compact Z²-FET Model Based on Artificial Neural Network and Its Applications;IEEE Transactions on Electron Devices;2024-06

2. Impact of Process Variation on Leakage and Drive Currents of FED Structures Using Linear Regression and Random Forest Algorithms;Silicon;2023-10-25

3. The SOI Transistor;75th Anniversary of the Transistor;2023-07-03

4. Performance comparison of 6T SRAM bit-cells based on side-contacted FED and CMOS;Alexandria Engineering Journal;2020-10

5. Novel gate-grounded NMOS Triggered Device Structures for FD-SOI ESD Protection;2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC Sapporo/APEMC);2019-06

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