A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability-Reference-Cited by-同舟云学术

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A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability

Published:2007-03 Issue:3 Volume:54 Page:563-571
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hamamoto Takeshi,Minami Yoshihiro,Shino Tomoaki,Kusunoki Naoki,Nakajima Hiroomi,Morikado Mutsuo,Yamada Takashi,Inoh Kazumi,Sakamoto Atsushi,Higashi Tomoki,Fujita Katsuyuki,Hatsuda Kosuke,Ohsawa Takashi,Nitayama Akihiro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4114830/04114842.pdf?arnumber=4114842

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