Author:
Cristoloveanu S.,Lee K.H.,Parihar M.S.,El Dirani H.,Lacord J.,Martinie S.,Le Royer C.,Barbe J.-Ch.,Mescot X.,Fonteneau P.,Galy Ph.,Gamiz F.,Navarro C.,Cheng B.,Duan M.,Adamu-Lema F.,Asenov A.,Taur Y.,Xu Y.,Kim Y-T.,Wan J.,Bawedin M.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference45 articles.
1. A capacitorless DRAM cell on SOI substrate;Wann,1993
2. Concepts of capacitorless 1T-DRAM and unified memory on SOI;Cristoloveanu,2013
3. Floating body SOI memory: the scaling tournament;Bawedin,2011
4. A capacitor-less 1T-DRAM cell;Okhonin;IEEE Electron Device Lett,2002
5. A capacitorless double gate DRAM technology for sub-100-nm embedded and stand-alone memory applications;Kuo;IEEE Trans Electron Devices,2003
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