Analysis of hot carrier instability in a floating body cell
-
Published:2024-09-02
Issue:9
Volume:63
Page:094002
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Nakajima Hiroomi,Shino Tomoaki,Furuhashi Hironobu,Nishimura Jun,Higashi Tomoki,Fujita Katsuyuki,Hatsuda Kosuke,Fukuda Ryo,Kajiyama Takeshi
Abstract
Abstract
Hot carrier instability (HCI) in a floating body cell (FBC) has been investigated. The FBC is a dynamic random-access memory (DRAM) made entirely of a silicon-on-insulator (SOI)-MOS without a capacitor. For FBC realization, there is an influence of a physical phenomenon different from the normal MOS because of its structural and operational characteristics of SOI-MOS. The difference between bulk and SOI-MOS is not yet clear, especially for HCI. In this study, we clarified the importance of the structural and geometrical factors of the FBC cell transistor and the SOI-specific floating body effect in the HCI regime of FBCs.
Funder
KIOXIA Holdings Corporation