A Method to Improve Reliability in a 65-nm SRAM PUF Array-Reference-Cited by-同舟云学术

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A Method to Improve Reliability in a 65-nm SRAM PUF Array

Published:2018-06 Issue:6 Volume:1 Page:138-141
ISSN:2573-9603
Container-title:IEEE Solid-State Circuits Letters
language:
Short-container-title:IEEE Solid-State Circuits Lett.

Author:

Shifman Yizhak^ORCID,Miller Avi^ORCID,Keren Osnat^ORCID,Weizmann Yoav,Shor Joseph^ORCID

Funder

Israel Innovation Authority

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8011414/8538892/08519616.pdf?arnumber=8519616

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2. PT Symmetry-Enabled Physically Unclonable Functions for Anti-Counterfeiting RF Tags;IEEE Transactions on Antennas and Propagation;2024-06

3. Secure ECDSA SRAM-PUF Based on Universal Single/Double Scalar Multiplication Architecture;Micromachines;2024-04-21

4. A Design of 2-Stage Voltage Ramp-Up SRAM Physical Unclonable Function;Chinese Journal of Electronics;2024-03

5. 16.4 High-Density and Low-Power PUF Designs in 5nm Achieving 23× and 39× BER Reduction After Unstable Bit Detection and Masking;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18

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