Cycling Condition Impacts on 3D QLC NAND Reliability
Author:
Affiliation:
1. IBM Infrastructure, 2455 South Rd,Poughkeepsie,NY
2. IBM Infrastructure, India Systems Development Lab,Bengaluru,IN
3. IBM Research Europe, Säumerstrasse 4,Rüschlikon,Switzerland,8803
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511536.pdf?arnumber=10511536
Reference8 articles.
1. 3D NAND Flash Status and Trends
2. 3D-NAND cell challenges to enable high density and high-Performance devices
3. HeatWatch: Improving 3D NAND Flash Memory Device Reliability by Exploiting Self-Recovery and Temperature Awareness
4. Distributed Cycling in Charge Trap-Based 3D NAND Arrays: Model and Qualification Tests Implications
5. The Influence of NAND Flash Self-Recovery Effect on Retention Error
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