A Double-Sided Cooling 6.5kV SiC MOSFET Power Module With Insulation Enhancement Design-Reference-Cited by-同舟云学术

A Double-Sided Cooling 6.5kV SiC MOSFET Power Module With Insulation Enhancement Design

Published:2023-03-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Ma Liangjun¹,Zhang Hong¹,Yuan Tianshu¹,Ma Dingkun¹,Nie Yan¹,Li Lei¹,Yao Yilong¹,Wang Laili¹

Affiliation:

1. School of Electrical Engineering, Xi'an Jiaotong University,Xi'an,Shaanxi,China,710049

Funder

Fund of the Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131297.pdf?arnumber=10131297

Reference18 articles.

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2. A Highly Integrated Multi-Chip SiC MOSFET Power Module with Optimized Electrical and Thermal Performances;ma;IEEE Journal of Emerging and Selected Topics in Power Electronics,2022

3. Partial discharge measurement and analysis in high voltage IGBT modules under DC voltage

4. Properties, morphology and structure of BPDA/PPD/ODA polyimide fibres

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