Comparative Evaluation of 10 kV SiC MOSFET Power Module Insulation Ability Through Chip Neighborhood Range Electric Field Modelling
Author:
Affiliation:
1. Xi'an Jiaotong University,State Key Laboratory of Electrical Insulation and Power Equipment,Xi'an,China
Funder
National Key R&D Program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10582916/10582978/10583798.pdf?arnumber=10583798
Reference11 articles.
1. High Temperature Characteristics of Composite Materials Composed of Silicone Gel and Barium Titanate in High Voltage Power Modules
2. Packaging of a 10-kV Double-Side Cooled Silicon Carbide Diode Module With Thin Substrates Coated by a Nonlinear Resistive Polymer-Nanoparticle Composite
3. A Double-Sided Cooling 6.5kV SiC MOSFET Power Module With Insulation Enhancement Design
4. Influence of Cassette Design upon Breakdown Performance of a 4.5kV Press-pack IGBT Module
5. A Novel Chip Surface Shielding Structure for Promoting Insulation Capability of High Voltage Semiconductor Chip
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