A Comprehensive Study on Electric Field Coupling Effects of Medium-Voltage SiC Power Module and Optimization Design
Author:
Affiliation:
1. Xi’an Jiaotong University,School of Electrical Engineering,Xi’an,Shaanxi,China,710049
2. State Grid Shanghai Electric Power Research Institute,Shanghai,China
Funder
State Grid Corporation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509232.pdf?arnumber=10509232
Reference17 articles.
1. Electric-Field-Dominated Partial Discharge in Medium Voltage SiC Power Module Packaging: Model, Mechanism, Reshaping, and Assessment
2. A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances
3. Review on the Electric Field Calculation of Insulation Structure of High-voltage and High-power IGBT Device;Liu
4. Electric field enhancement control in active junction of IGBT power module
5. A Double-Sided Cooling 6.5kV SiC MOSFET Power Module With Insulation Enhancement Design
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