Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors-Reference-Cited by-同舟云学术

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Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors

Published:2022-02 Issue:2 Volume:43 Page:232-235
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Yen-Pu^ORCID,Si Mengwei^ORCID,Mahajan Bikram Kishore^ORCID,Lin Zehao^ORCID,Ye Peide D.^ORCID,Alam Muhammad Ashraful^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9694630/09646894.pdf?arnumber=9646894

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination;Advanced Functional Materials;2024-06-09

2. BEOL Compatible Ultra-Thin ITO Transistor With Performance Recoverable Capability by in Situ Electrothermal Annealing;IEEE Electron Device Letters;2024-05

3. Hydrogen-Related Instability of IGZO Field-Effect Transistors;IEEE Transactions on Electron Devices;2024-05

4. Suppressing Threshold Voltage Drift in Sub-2 nm In₂O₃ Transistors With Improved Thermal Stability;IEEE Electron Device Letters;2024-01

5. Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors;IEEE Transactions on Nanotechnology;2024

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