Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors-Reference-Cited by-同舟云学术

Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

Published:2024 Issue: Volume:23 Page:299-302
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Chen Yi-Xuan¹^ORCID,Wang Yi-Lin²,Li Fu-Jyuan²,Chang Shu-Jui³,Lee Tsung-En³,Cheng Chao-Ching³^ORCID,Lee Meng-Chien⁴^ORCID,Li Hui-Hsuan⁴^ORCID,Lin Yu-Hsien²^ORCID,Chien Chao-Hsin⁴

Affiliation:

1. Department of Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Department of Electronic Engineering, National United University, Miaoli, Taiwan

3. Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan

4. Department of Electronics Engineering and the Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Taiwan Semiconductor Research Institute for technical

National Chiao Tung University Nano Facility Center

Taiwan Instrument Research Institute, National Applied Research Laboratories

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7729/10368312/10478822.pdf?arnumber=10478822

Reference22 articles.

1. Integrated Active-Matrix Capacitive Sensor Using a-IGZO TFTs for AMOLED

2. Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors and Its Application to AM-OLEDs

3. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics

4. Role of Oxygen in Amorphous In-Ga-Zn-O Thin Film Transistor for Ambient Stability

5. Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

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