Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application-Reference-Cited by-同舟云学术

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Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

Published:2013-09 Issue:9 Volume:34 Page:1157-1159
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Fuh Chur-Shyang,Liu Po-Tsun,Teng Li-Feng,Huang Sih-Wei,Lee Yao-Jen,Shieh Han-Ping D.,Sze Simon M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6583991/06564440.pdf?arnumber=6564440

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3. High-Stability IWO Thin-Film Transistors Under Microwave Annealing for Low Thermal Budget Application;IEEE Transactions on Nanotechnology;2024

4. Effect of Rapid Cooling Using Low-Temperature Deionized Water on Ingazno (Igzo) Thin-Film Transistors;2024

5. UV irradiation assisted low-temperature process for thin film transistor performance improvement of praseodymium-doped indium zinc oxide;Journal of Physics D: Applied Physics;2023-11-21

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