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Area-Selective Electroless Deposition of Cu for Hybrid Bonding

  • Published:2021-12 Issue:12 Volume:42 Page:1826-1829
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Inoue FumihiroORCID,Iacovo Serena,El-Mekki Zaid,Kim Soon-Wook,Struyf Herbert,Beyne EricORCID

Funder

IMEC 3D System Integration Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D Integration via D2D Bump-Less Cu Bonding with Protruded and Recessed Topographies;ECS Journal of Solid State Science and Technology;2023-08-01

2. Barrier/seed system for electroless metallization on complex surfaces using (aminomethylaminoethyl)phenethyltrimethoxysilane self-assembled films;Journal of Vacuum Science & Technology B;2023-07-01

3. Surface Topography Control on Cu Pad for Hybrid Bonding;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05

4. A novel and simple method of low temperature, low process time, pressureless interconnection for 3D packaging;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

5. Inorganic Temporary Direct Bonding for Collective Die to Wafer Hybrid Bonding;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05
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