Surface Topography Control on Cu Pad for Hybrid Bonding
Author:
Affiliation:
1. Yokohama National University,Yokohama,Japan
2. Mitsubishi Chemical Corp.,Tokyo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10154618/10154586/10154869.pdf?arnumber=10154869
Reference10 articles.
1. Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology
2. Development of face-to-face and face-to-back ultra-fine pitch Cu-Cu hybrid bonding
3. Optimization of Cu/SiCN CMP process for surface preparation targeting W2W hybrid bonding;Dewilde
4. Influence of Composition of SiCN as Interfacial Layer on Plasma Activated Direct Bonding
5. Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Minimizing Recess of Cu Pad on Hybrid Bonding with SiCN via Non-selective Chemical Mechanical Polishing and Post-cleaning Steps;ECS Journal of Solid State Science and Technology;2024-07-01
2. Process Development and Performance Benefits of 0.64-0.36 μm Pitch Hybrid Bonding on Intel Process;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
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