A New Emitter-Base-Collector-Base-Emitter SiGe HBT for High Power, Single-Pole Double-Throw X-Band Switches
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9385573/09363167.pdf?arnumber=9363167
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fully Integrated SiGe HBT BiCMOS Transmit-Receive Front-End IC for 5G mmW Radio with A Reconfigurable Built-In Diode RF Switch;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
2. An 11–40-GHz High-Power Switch With Miniaturized High-Order Topology Using 100-nm GaN-on-Si HEMTs;IEEE Transactions on Electron Devices;2022-11
3. An Efficient, Broadband SiGe HBT Non-Uniform Distributed Power Amplifier Leveraging a Compact, Two-Section λ/4 Output Impedance Transformer;IEEE Transactions on Microwave Theory and Techniques;2022-07
4. A Compact, Low Loss, and Broadband Two-Section Lumped-Element Wilkinson Power Combiner Using 130 nm SiGe HBT BiCMOS Technology;2022 14th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2022-05-18
5. The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05
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