An Efficient, Broadband SiGe HBT Non-Uniform Distributed Power Amplifier Leveraging a Compact, Two-Section λ/4 Output Impedance Transformer
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Ajou University, Suwon, South Korea
2. School of Electrical and Computer Engineering, Georgia Institute of Technology (Georgia Tech), Atlanta, GA, USA
Funder
New Faculty Research Fund of Ajou University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/9813473/09771053.pdf?arnumber=9771053
Reference40 articles.
1. A study on design methodologies of power amplifiers using SiGe BiCMOS technologies;ju,2019
2. A New Emitter-Base-Collector-Base-Emitter SiGe HBT for High Power, Single-Pole Double-Throw X-Band Switches
3. A Compact, Wideband Lumped-Element Wilkinson Power Divider/Combiner Using Symmetric Inductors with Embedded Capacitors
4. A 2–24 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier Using A Compact, Wideband Two-Section Lumped Element Output Impedance Transformer
5. A DC to 22 GHz, 2W high power distributed amplifier using stacked FET topology with gate periphery tapering;fujii;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),2016
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