The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications-Reference-Cited by-同舟云学术

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The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications

Published:2021-12-05 Issue: Volume: Page:
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Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Magnee Peter,Leenaerts Domine,Van der Heijden Mark,Dinh Thanh Viet,To Ivan,Brunets Ihor

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682483.pdf?arnumber=9682483

Reference28 articles.

1. Device Architectures for High-speed SiGe HBTs

2. SiGe HBT PA Design for 5G (28 GHz and Beyond) - Modeling and Design Challenges

3. A 79 GHz Phase-Modulated 4 GHz-BW CW Radar Transmitter in 28 nm CMOS

4. A 45nm 76–81 GHz CMOS radar receiver for automotive applications;sahu;IEEE Asian SSCC,2019

5. A Wideband 62-mW 60-GHz FMCW Radar in 28-nm CMOS

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reframing Fast-Chirp FMCW Transceivers for Future Automotive Radar: The pathway to higher resolution;IEEE Solid-State Circuits Magazine;2022

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