A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz-Reference-Cited by-同舟云学术

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A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz

Published:1989-10 Issue:10 Volume:10 Page:437-439
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Smith P.M.,Lester L.F.,Chao P.-C.,Ho P.,Smith R.P.,Ballingall J.M.,Kao M.-Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/1649/00043092.pdf?arnumber=43092

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy;Journal of Crystal Growth;2003-04

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3. Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures;Journal of Crystal Growth;2000-06

4. Optimization of InxGa1−xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy;Materials Science and Engineering: B;2000-06

5. Optoelectronic techniques for ultrafast device network analysis to 700 GHz;Optical and Quantum Electronics;1996-07

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