Optimization of InxGa1−xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz
2. Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs
3. Investigation of wet etching solutions for In0.5Ga0.5P
4. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
5. Compositionally graded emitter InGa(As)P/GaAs heterojunction bipolar transistors
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1. Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures;Journal of Crystal Growth;2000-06
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