Compositionally graded emitter InGa(As)P/GaAs heterojunction bipolar transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941449?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
2. Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaP
3. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
4. Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes
5. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
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1. Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures;Semiconductor Science and Technology;2001-12-19
2. Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors;Japanese Journal of Applied Physics;2001-12-15
3. Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures;Journal of Crystal Growth;2000-06
4. Optimization of InxGa1−xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy;Materials Science and Engineering: B;2000-06
5. InGaP/InGaAs/GaAs High Electron Mobility Transistor Structure Grown by Solid Source Molecular Beam Epitaxy Using GaP as Phosphorous Source;Japanese Journal of Applied Physics;1997-06-01
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