Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures-Reference-Cited by-同舟云学术

Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures

Published:2000-06 Issue:1-4 Volume:216 Page:51-56
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zheng H.Q,Yoon S.F,Gay B.P,Mah K.W,Radhakrishnan K,Ng G.I

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz

2. Investigation of wet etching solutions for In0.5Ga0.5P

3. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition

4. Compositionally graded emitter InGa(As)P/GaAs heterojunction bipolar transistors

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