Performance of AlGaInP/InGaAs enhancement/depletion-mode pseudomorphic doping-channel field-effect transistors
Author:
Funder
Ministry of Science and Technology of the Republic of China
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Characteristics of a Pd–oxide–In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor
2. Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures
3. Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages
4. Microwave complementary doped-channel field-effect transistors
5. Comparative Studies on Double δ-Doped Al[sub 0.3]Ga[sub 0.7]As∕In[sub x]Ga[sub 1−x]As∕GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches;Semiconductors;2019-03
2. Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers;ECS Journal of Solid State Science and Technology;2019
3. Mechanochemical synthesis of InAs nanocrystals;Materials Letters;2015-11
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