Detecting memory faults in the presence of bit line coupling in SRAM devices-Reference-Cited by-同舟云学术

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Detecting memory faults in the presence of bit line coupling in SRAM devices

Published:2010-11 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE International Test Conference
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Author:

Irobi Sandra,Al-Ars Zaid,Hamdioui Said

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5684496/5699173/05699246.pdf?arnumber=5699246

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Linked Coupling Faults Detection by Multirun March Tests;Applied Sciences;2024-03-15

2. SRAM Memory Testing Methods and Analysis;Advances in Systems Analysis, Software Engineering, and High Performance Computing;2023-12-18

3. Comparative Analysis of Open and Short Defects in Embedded SRAM Using Parasitic Extraction Method for Deep Submicron Technology;Wireless Personal Communications;2023-08-28

4. Analysis of Open Defect Faults in Single 6T SRAM Cell Using R and C Parasitic Extraction Method;2021 International Conference on Disruptive Technologies for Multi-Disciplinary Research and Applications (CENTCON);2021-11-19

5. Efficient Resistive Defect Detection Technique for Performance Enhancement of Static Random Access Memory;Lecture Notes in Electrical Engineering;2021-11-09

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