Analysis of Open Defect Faults in Single 6T SRAM Cell Using R and C Parasitic Extraction Method-Reference-Cited by-同舟云学术

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Analysis of Open Defect Faults in Single 6T SRAM Cell Using R and C Parasitic Extraction Method

Published:2021-11-19 Issue: Volume: Page:
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Container-title:2021 International Conference on Disruptive Technologies for Multi-Disciplinary Research and Applications (CENTCON)
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Author:

Maddela Venkatesham,Sinha Sanjeet Kumar,Muddapu Parvathi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9687822/9687859/09687916.pdf?arnumber=9687916

Reference20 articles.

1. Resistance Characterization for Weak Open Defects;li;IEEE International Test Conference Baltimore,2001

2. Functional Memory Faults: A Formal Notation and a Taxonomy;montañésand;IEEE Design and Test of Computers,2002

3. Defect-oriented dynamic fault models for embedded-SRAMs

4. Comparison of open and resistive-open defect test conditions in SRAM address decoders

5. Analysis of different parameters of channel material and temperature on threshold voltage of CNTFET

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SRAM Memory Testing Methods and Analysis;Advances in Systems Analysis, Software Engineering, and High Performance Computing;2023-12-18

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